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HGTP3N60A4FAIRCHILN/a12avai600V, SMPS Series N-Channel IGBT


HGTP3N60A4 ,600V, SMPS Series N-Channel IGBTapplications operating at high frequencies where low  Temperature Compensating SABER™ Modelconduct ..
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HGTP3N60A4
600V, SMPS Series N-Channel IGBT
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S, HGT1S3N60A4S and the
HGTP3N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25o C and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49327.
Symbol
Features
>100kHz Operation at 390V, 3A 200kHz Operation at 390V, 2.5A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T J = 125oC
12mJ EAS Capability Low Conduction Loss Temperature Compensating SABER™ Model
Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.
HGT1S3N60A4S9A
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
COLLECTOR(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
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