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HGTG30N60B3FSCN/a50avai60A, 600V, UFS Series N-Channel IGBT


HGTG30N60B3 ,60A, 600V, UFS Series N-Channel IGBTfeatures of MOSFETs and bipolar • 600V Switching SOA Capabilitytransistors. This device has the hig ..
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HGTG40N60B3 ,70A, 600V, UFS Series N-Channel IGBTFeaturesoThe HGTG40N60B3 is a MOS gated high voltage switching • 70A, 600V, T = 25 CCdevice combini ..
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HGTG30N60B3
60A, 600V, UFS Series N-Channel IGBT
HGTG30N60B3
60A, 600V , UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
C and 150
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly Developmental Type TA49170.
Symbol
Features
60A, 600V, T
= 25 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T
= 150 Short Circuit Rating Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information

NOTE: When ordering, use the entire part number.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
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