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HGTG10N120BND |HGTG10N120BNDFSC N/a3000avai35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG10N120BNDFAIRCHILN/a120avai35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode


HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs and bipolar transistors. This device • Short Circuit Ratinghas the high input i ..
HGTG10N120BND ,35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 35A, 1200V, T = 25 CCThe HGTG10N120BND is a Non-Punch ..
HGTG11N120CN ,43A/ 1200V/ NPT Series N-Channel IGBTFeaturesoThe HGTG11N120CN, HGTP11N120CN, and• 43A, 1200V, T = 25 CCHGT1S11N120CNS are Non-Punch Thr ..
HGTG11N120CND ,43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFeatureswith Anti-Parallel Hyperfast Diodeo• 43A, 1200V, T = 25 CCThe HGTG11N120CND is a Non-Punch ..
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HGTG12N60B3D ,27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodefeatures of MOSFETs and bipolaro = 150 C• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at ..
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HGTG10N120BND
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG10N120BND
35A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG10N120BND is a
on-
unch
hrough (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49290. The Diode used is the
development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49302.
Features
35A, 1200V, T
= 25 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
= 150 Short Circuit Rating Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Symbol
Ordering Information

NOTE: When ordering, use the entire part number.
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
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