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HFA32PA120C
1200V 16A HEXFRED Common Cathode Diode in a TO-247AC package
International
TOR, Rectifier
Bulletin PD -2.360 rev.B 05/01
HFA32PA120C
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qrr
. Specified at Operating Conditions
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
per Leg
VR = 1200V
VF(typ.) = 2.3V
IF(AV) = 16A
er (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA32PA120C is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in TO-MMC
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA32PAI20C
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tr, portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter Max Units
VR Cathode-to-Anode Voltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 16
IFSM Single Pulse Forward Current 190 A
IFRM Maximum Repetitive Forward Current 64
Pro A) Tc = 25°C Maximum Power Dissipation 151 DC
PD @ To = 100°C Maximum Power Dissipation 60
T: Operating Junction and -55 to +150 W
TSTG Storage Temperature Range
* 125°C
1
HFA32PA120C
Bulletin PD-2.360 rev.B 05/01
Electrical Characteristics (per Leg) @ Tu = 25°C (unless otherwise specified)
International
IDR Rectifier
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 V IR = 100pA
2.5 3.0 IF = 16A
VFM Max Forward Voltage 3.2 3.93 V IF = 32A See Fig. 1
2.3 2.7 IF =16A,T: = 125°C
IRM Max Reverse Leakage Current 0.75 20 pA VR = VR Rated See Fig. 2
375 2000 TJ = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance 27 40 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH
package body
Dynamic Recovery Characteristics (per Leg) © TJ = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
tn Reverse Recovery Time 30 IF = 1.0A, dif/dt = 200A/ps, VR = 30V
trr1 See Fig. 5, 10 90 135 ns T: = 25°C
trr2 164 245 T, = 125''C IF = 16A
IRRM1 Peak Recovery Current 5.8 10 A T: = 25°C
IRRMZ See Fig. 6 8.3 15 T, =125°C VR = 200V
Qm Reverse Recovery Charge 260 675 nC T: = 25°C
er2 See Fig. 7 680 1838 T, = 125°C difldt = zooms
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 120 Alps T: = 25°C
di
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead® Lead Temperature 300 (
RthJC Thermal Resistance, Junction to Case 0.83
Ram © Thermal Resistance, Junction to Ambient 80 K/W
Rthcs® Thermal Resistance, Case to Heat Sink 0.50
. 2.0 g
Wt Weight 0.07 (oz)
Mounting Torque 6.0 12 Kggn
5.0 10 Ibrin
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
