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HFA08TB60 |HFA08TB60IR N/a5000avai600V 8A HEXFRED Discrete Diode in a TO-220AC package
HFA08TB60. |HFA08TB60IRN/a49avai600V 8A HEXFRED Discrete Diode in a TO-220AC package
HFA08TB60.. |HFA08TB60IRN/a100avai600V 8A HEXFRED Discrete Diode in a TO-220AC package


HFA08TB60 ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.4V• Ultrafast Recovery F4• Ultrasoft RecoveryI = 8.0AF(AV)• Very Low IRRMQ (t ..
HFA08TB60. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packagefeaturesextremely low values of peak recovery current (I ) and does not exhibit anyRRMtendency to " ..
HFA08TB60.. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageapplications where high speed, high efficiencyis needed.Absolute Maximum Ratings Param ..
HFA08TB60PBF ,600V 8A UltraFast Recovery Diode packaged in TO-220AC packageapplications where high speed, high efficiency is needed. Standard Pack Base part number   Pa ..
HFA08TB60S ,600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR(K)• Ultrafast RecoveryV (typ.)* = 1.4VBASE F• Ultrasoft Recovery+I = 8.0AF(AV)2• ..
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HFA08TB60 -HFA08TB60.-HFA08TB60..
600V 8A HEXFRED Discrete Diode in a TO-220AC package
International
Tart, Rectifier
Bulletin PD -2.341
rev. A 11/00
HFA08TB60
HEXFREDTM
Ultrafast, Soft Recovery Diode
CATHODE
Features
. Ultrafast Recovery 4
. Ultrasoft Recovery
. Very Low IRRM
. Very Low Qrr
. Specired at Operating Conditions
Benefits
. Reduced RFI and EMI l 3
. Reduced Power Loss in Diode and Switching 2
VR = 600V
vF(typ.)* = 1.4V
IF(AV) = 8.0A
er (typ.)= 65nC
IRRM = 5.0A
tr,(typ.) = 18ns
di(rec)M/dt (typ.) = 240AIps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-oft" during the tr, portion ofrecovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
TO-220AC
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ To = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 60 A
IFRM Maximum Repetitive Forward Current 24
Pro @ Tc = 25°C Maximum Power Dissipation 36 W
PD @ Tc = 100°C Maximum Power Dissipation 14
T: Operating Junction and _ 55 to +150 C
TSTG Storage Temperature Range
* 125°C
4/8/97
HFA08TB60
Bulletin PD-2.341 rev.A 10/00
International
TOR Rectifier
Electrical Characteristics ti) To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 V IR = 100pA
IA 1.7 IF = 8.0A
VFM Max Forward Voltage 1.7 2.1 v IF = 16A See Fig. 1
1.4 1.7 IF = 8.0A, TJ =125°C
IRM Max Reverse Leakage Current 0.3 5.0 pA VR = VR Rated See Fig. 2
100 500 T, = 125°C, VR = (18 x VR Rated
Cr Junction Capacitance 10 25 pF VR = 200V See Fig. 3
. Measured lead to lead 5mm from
Ls Series Inductance 8.0 nH package body
Dynamic Recovery Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 18 IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, 6 & 16 37 55 ns T: = 25''C
trr2 55 90 TJ =125°C IF = 8.0A
IRRM1 Peak Recovery Current 3.5 5.0 To = 25''C
IRRMZ See Fig. " 8 4.5 80 TJ =125°C VR = 200V
Qm Reverse Recovery Charge 65 138 T: = 25''C
1 n0 .
er2 See Fig. 9 & 10 124 360 TJ = 125°C dk/dt = 200A/ps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current 240 Alps T: = 25°C
di(,ec)M/dt2 Duringtb See Fig. 11 & 12 210 TJ =125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead® Lead Temperature 300 ''C
RthJc Thermal Resistance, Junction to Case 3.5
RthoAOD Thermal Resistance, Junction to Ambient 80 KAN
Rthcs© Thermal Resistance, Case to Heat Sink 0.5
Wt Weight 2.0 g
0.07 (oz)
Mounting Torque 6.0 12 Kg-cm
5.0 10 Ibf-in
C) 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased

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