HFA08TB120 ,1200V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.4VF 4• Ultrafast RecoveryI = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nCr ..
HFA08TB120S ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures V = 1200VRBaseCathode• Ultrafast RecoveryV (typ.)* = 2.4VF2• Ultrasoft RecoveryI = 8.0AF ..
HFA08TB120STRL ,1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageapplications where highspeed, high efficiency is needed.Absolute Maximum Ratings Param ..
HFA08TB60 ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 1.4V• Ultrafast Recovery F4• Ultrasoft RecoveryI = 8.0AF(AV)• Very Low IRRMQ (t ..
HFA08TB60. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packagefeaturesextremely low values of peak recovery current (I ) and does not exhibit anyRRMtendency to " ..
HFA08TB60.. ,600V 8A HEXFRED Discrete Diode in a TO-220AC packageapplications where high speed, high efficiencyis needed.Absolute Maximum Ratings Param ..
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HFA08TB120
1200V 8A HEXFRED Discrete Diode in a TO-220AC package
International
TOR Rectifier
Bulletin PD-2.383 rev.C 11/00
H FAO8TB120
HEXFRED"'
Ultrafast, Soft Recovery Diode
CAYNODE
Features
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low G,
. Specified at Operating Conditions
VR = 1200V
vp (typr = 2.4V
IF (AV) = 8.0A
er (typ.)= 140nC
IRRM (typ.) = 4.5A
trr (typ.) = 28ns
dime) M ldt (typ.)* = 85A /ps
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
ti's'ts
TO-220AC
Description
International Rect'fer's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for lGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tr, portion of recovery. The
HEXFRED features combine to offerdesigners a rectifierwith lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motordrives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max Units
VR Cathode-to-AnodeVoltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 8.0 A
IFSM Single Pulse Forward Current 130
IFRM Maximum Repetitive Forward Current
Po © Tc = 25''C Maximum Power Dissipation 73.5 W
PD @ To = 100°C Maximum Power Dissipation
To Operating Junction and - 55 to 150 'C
TSTG Storage Temperature Range
* 125°C
HFA08TB120
Bulletin PD-2.383 rev.C 11l00
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown 1200 - - V IR = 100pA
Voltage
VFM Max. Forward Voltage - 2.6 3.3 V IF = 8.0A
- 3.4 4.3 IF = 16A
- 2.4 3.1 IF = 8.0A, To =125°C
IRM Max. Reverse Leakage - 0.31 10 uA VR = VR Rated
Current - 135 1000 To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 11 20 pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse RecoveryTime - 28 - ns IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm - 63 95 To = 25°C IF = 8.0A
trr2 - 106 160 To = 125°C VR = 200V
|RRM1 Peak RecoveryCurrent - 4.5 8.0 A TJ = 25°C di tldt = 200Alps
IRRMZ - 6.2 11 TJ =125°C
Qm Reverse RecoveryCharge - 140 380 no To = 25°C
er2 - 335 880 T: = 125''C
di(rec)M ldt1 Peak Rate of Recovery - 133 - Alps To = 25''C
di(rec)M ldt2 Current During tb - 85 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead OD Lead Temperature - - 300 "C
Rthoc Thermal Resistance, Junction to Case - - 1.7 k/W
RthJA © Thermal Resistance, Junction to Ambient - - 40
RthCSG) Thermal Resistance, Case to Heat Sink - 0.25 -
Wt Weight - 6.0 - g
- 0.21 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 Ibf-in
OD 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
co Mounting Surface, Flat, Smooth and Greased
