HFA08PB60 ,600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures V = 600VRCATHODE• Ultrafast RecoveryV (typ.)* = 1.4VF4• Ultrasoft RecoveryI = 8.0AF(AV)• V ..
HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
HFA08SD60SPBF , Ultrafast Soft Recovery Diode, 8 A
HFA08TA60C ,600V 8A HEXFRED Common Cathode Diode in a TO-220AB packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TA60CS ,600V 8A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) packageFeaturesV = 600VR• Ultrafast Recovery• Ultrasoft RecoveryV = 1.8VF• Very Low IRRM• Very Low QrrQ * ..
HFA08TB120 ,1200V 8A HEXFRED Discrete Diode in a TO-220AC packageFeaturesV (typ.)* = 2.4VF 4• Ultrafast RecoveryI = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nCr ..
HM628512CLTT-5 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-5SL , 4 M SRAM (512-kword ´ 8-bit)
HM628512CLTT-7 , 4 M SRAM (512-kword x 8-bit)
HM628512CLTT-7SL , 4 M SRAM (512-kword x 8-bit)
HM628512CLTTI-5 , Wide Temperature Range Version 4 M SRAM (512-kword ´ 8-bit)
HFA08PB60
600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
International
TOR Rectifier
Bulletin PD-20050 01/01
HFA08PB60
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
. UItrafastRecovery
. Ultrasoft Recovery 4
. Very LowIRRM
. Very Low Qrr
. Specified at Operating Conditions 2
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching 2
CATHODE
VR = 600V
VF(typ.)* = 1.4V
|F(AV) = 8.0A
er (typ.)= 65nC
IRRM = 3.5A
trr(typ.) = 18ns
di(rec)M/dt (typ.)* = 21 OA/ps
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA08PB60 is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of600 volts and 8 amps continuous current, the HFA08PB60
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08PB60 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
T0-247AC(Modified)
Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ Tc = 25°C Continuous Forward Current
IF @ Tc = 100°C Continuous Forward Current 8.0 A
IFSM Single Pulse Forward Current 60
IFRM Maximum Repetitive Forward Current 24
Pro © To = 25°C Maximum Power Dissipation 36 W
Pro @ Tc = 100°C Maximum Power Dissipation 14
TJ Operating Junction and -55 to +150 C
TSTG Storage Temperature Range
* 125°C
HFA08PB60
Bulletin PD-20050 01/01
International
TOR Rectifier
Electrical Characteristics ti) To = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100pA
- 1.4 1.7 IF = 8.0A
VFM Max Forward Voltage _ 1.7 2.1 V IF = 16A See Fig. 1
- 1.4 1.7 IF = 8.0A, Tu = 125°C
- = See Fi . 2
IRM Max Reverse Leakage Current 0.3 5.0 pA VR VR Rated g
- 100 500 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 10 25 pF VR = 200V See Fig. 3
Ls Series In ductance - 8.0 - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics © To =
25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time 18 IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5, IO 37 55 ns TJ = 25°C
trr2 55 90 T: = 125°C IF = 8.0A
|RRM1 Peak Recovery Current 3.5 5.0 A TJ = 25°C
IRRMZ See Fig. 6 4.5 8.0 T: =125°C VR = 200V
Qm Reverse Recovery Charge 65 138 no T: = 25°C
an See Fig. 7 124 360 Tu = 125°C diddt = 200Nps
di(rec)M/dt1 Peak Rate of Fall of Recovery Current 240 Alps T: = 25°C
di(,ec)M/dt2 During tr, See Fig. 8 210 TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
Tlead® Lead Temperature - - 300 ''C
Rsoc Thermal Resistance, Junction to Case - - 3.5
ReJA® Thermal Resistance, Junction to Ambient - - 40 KNV
Reese) Thermal Resistance, Case to Heat Sink - 0.25 -
Wt Weight - 6.0 - g
- 0.21 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 Ibf-in
OD 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
