HFA06PB120 ,1200V 6A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures• Ultrafast RecoveryBASEV = 1200VRCATHODE• Ultrasoft RecoveryV (typ.)* = 2.4VF• Very Low IR ..
HFA06TB120 ,1200V 6A HEXFRED Discrete Diode in a TO-220AC packageFeaturesCATHODEV = 1200VR• Ultrafast RecoveryV (typ.)* = 2.4VF4• Ultrasoft RecoveryI = 6.0A• Very L ..
HFA06TB120S ,1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures• Ultrafast Recovery(K)V = 1200VR• Ultrasoft RecoveryBASE• Very Low I V (typ.)* = 2.4VRRM ..
HFA08PB120 ,1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeaturesV (typ.)* = 2.4VF • Ultrafast Recovery 4I = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nC• ..
HFA08PB60 ,600V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures V = 600VRCATHODE• Ultrafast RecoveryV (typ.)* = 1.4VF4• Ultrasoft RecoveryI = 8.0AF(AV)• V ..
HFA08SD60S ,600V 8A HEXFRED Discrete Diode in a D-Pak packageapplicationswhere high speed and reduced switching losses are designrequirements.D - PAKAbsolute M ..
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HFA06PB120
1200V 6A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
International
TOR Rectifier
Bulletin PD -2.363 rev.D 12/00
HFA06PB120
HEXFRED'"
Featu res
. Ultrafast Recovery
. Ultrasoft Recovery
. Very Low IRRM
. Very Low G,
. Specified atOperating Conditions
Benefits
. Reduced RFI and EMI
. Reduced Power Loss in Diode and Switching
Transistor
. HigherFrequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
Ultrafast, Soft Recovery Diode
VR = 1200V
VFWP-Y = 2AN
IHAV) = 6.0A
Gr(typ.)=116nC
IRRMUYP) = 4.4A
l 3 trr(typ.) = 26ns
2 di(rec)M/dt (typ.)* = 100Alps
CAVNODE
TO-247AC (Modified)
International Rectifer's HFA06PB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of Characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1 200 volts and
6 amps continuous current, the HFA06PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to "snap-off" during the tn portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
countand heatsinksizes. The HEXFRED HFA06PB1 20 is ideally suited for applications
in powersupplies and powerconversion systems (such as inverters), motordrives, and
many other similar applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-to-An) Voltage 1200 V
IF @ Tc = 100°C Continuous Forward Current 8.0
IFSM Single Pulse Forward Current 80 A
IFRM Maximum Repetitive Forward Current 24
Pp @ Tc = 25'C Maximum Power Dissipation 62.5 W
PD @ Tc = 100'C Maximum Power Dissipation 25
To Operating Junction and -55 to +150 (
Tsre Storage Temperature Range
* 125°C
HFA06PB120 International
Bulletin PD-2.363 rev.D 12/00 IEER Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units TestConditions
VBR Cathode Anode Breakdown 1200 - - V IR =100pA
Voltage
VFM Max. Forward Voltage - 2.7 3.0 IF = 6.0A
- 3.5 3.9 V |F=12A
- 2.4 2.8 IF = 6.0A, To = 125°C
IRM Max. Reverse Leakage - 0.26 5.0 VR = VR Rated
Current - 110 500 TSA To = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance --.- 9.0 14 pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse RecoveryTime - 26 - IF = 1.0A, dir/dt = 200A/us, VR = 30V
1m - 53 80 ns T: = 25''C
trr2 - 87 130 T, =125°C IF = 6.0A
IRRW Peak Recovery Current - 4.4 8.0 A T: = 25''C
IRRMZ - 5.0 9.0 T: = 125°C VR = 200V
Qm Reverse Recovery Charge - 116 320 T: = 25°C
an - 233 585 nC T: = 125''C dk/dt = 200A/ps
di(rec)M/dt1 Peak Rate of Recovery - 180 - T: = 25''C
di
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Tlead © Lead Temperature - - 300 "C
Rthoc Thermal Resistance, Junction to Case - - 2.0
RNA © Thermal Resistance, Junctionto Ambient --.-.- -.-.-.- 80 KAN
Rthcso Thermal Resistance, Case to Heat Sink - 0.5 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 -.-.-.- 10 lbf-in
co 0.063 in. from Case (1.6mm) for 10 sec
© Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
