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HFA04TB60SIRN/a3200avai600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HFA04TB60STRRIRN/a1600avai600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package


HFA04TB60S ,600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures(K)V = 600VR• Ultrafast RecoveryBASE• Ultrasoft Recovery+V = 1.8VF• Very Low I 2RRM• Very ..
HFA04TB60STRR ,600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packagefeatures a superb combination of characteristics which result inperformance which is unsurpassed by ..
HFA06PB120 ,1200V 6A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeatures• Ultrafast RecoveryBASEV = 1200VRCATHODE• Ultrasoft RecoveryV (typ.)* = 2.4VF• Very Low IR ..
HFA06TB120 ,1200V 6A HEXFRED Discrete Diode in a TO-220AC packageFeaturesCATHODEV = 1200VR• Ultrafast RecoveryV (typ.)* = 2.4VF4• Ultrasoft RecoveryI = 6.0A• Very L ..
HFA06TB120S ,1200V 6A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) packageFeatures• Ultrafast Recovery(K)V = 1200VR• Ultrasoft RecoveryBASE• Very Low I V (typ.)* = 2.4VRRM ..
HFA08PB120 ,1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) packageFeaturesV (typ.)* = 2.4VF • Ultrafast Recovery 4I = 8.0AF (AV)• Ultrasoft RecoveryQ (typ.)= 140nC• ..
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HFA04TB60S-HFA04TB60STRR
600V 4A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
Bulletin PD -20614 reV.A 12/00
International
TOR Rectifier
HFA04TB60S
Ultrafast, Soft Recovery Diode
H EX F R E D'"
Features (K)
. Ultrafast Recovery BASE
. Ultrasoft Recovery +
. Very Low IRRM 2
. Very Low Qrr
. Specified at Operating Conditions
Benefits
(NIC) 1
. Reduced RFI and EMI
VR = 600V
VF = 1.8V
er * = 40nC
di(rec)M/dt * = 280A/ps
* 125°C
. Reduced Power Loss in Diode and Switching
Transistor
. Higher Frequency Operation
. Reduced Snubbing
. Reduced Parts Count
Description
International Rectifier‘s HFA04TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recoverytime, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-to-Anode Voltage 600 V
IF @ Tc = 100°C Continuous Forward Current 4.0
IFSM Single Pulse Forward Current 25 A
IFRM Maximum Repetitive Forward Current 16
Pro @ Tc = 25°C Maximum Power Dissipation 25 W
Po @ Tc = 100°C Maximum Power Dissipation 10
TJ Operating Junction and a
TSTG Storage Temperature Range -55 to +150 C
HFA04TB60S
Bulletin PD-20614 rein/k 12100
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 - - V IR = 100pA
1.5 1.8 IF = 4.0A
VFM Max Forward Voltage - 1.8 2.2 V IF = 8.0A See Fig. 1
1.4 1.7 IF = 4.0A, T: = 125°C
= See Fi . 2
IRM Max Reverse Leakage Current 0.17 3.0 pA VR VR Rated 19
44 300 T, = 125°C, VR = 0.8 x VR Rated
CT Junction Capacitance - 4.0 8.0 pF VR = 200V See Fig. 3
Ls Series In ductance - 8. O - nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time - 17 - IF = 1.0A, dir/dt = 200A/ps, VR = 30V
tm See Fig. 5 & 6 - 28 42 ns T: = 25°C
trr2 - 38 57 TJ = 125°C IF = 4.0A
IRRm Peak Recovery Current - 2.9 5.2 A To = 25°C
IRRMZ - 3.7 67 TJ = 125°C VR = 200V
Qm Reverse Recovery Charge - 40 60 n0 T: = 25°C
er2 See Fig. 7 - 70 105 TJ = 125°C diddt = 200/Vps
di(,ec)M/dt1 Peak Rate of Fall of Recovery Current - 280 - Alps T: = 25°C
di(,ec)M/dt2 During tr, See Fig. 8 - 235 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameter Min. Typ. Max. Units
Teat co Lead Temperature - - 300 "C
Rm; Thermal Resistance, Junction to Case - - 5.0 K/W
RNA © Thermal Resistance, Junction to Ambient - - 80
IM Weight - 2.0 - g
- 0.07 - (oz)
co 0.063 in. from Case (1.6mm) for 10 sec
C) Typical Socket Mount
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