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HCF4069UPHN/a58avaiHEX INVERTER


HCF4069U ,HEX INVERTERapplications where thefabricated in Metal Oxide Semiconductormedium power TTL-drive and logic level ..
HCF4069UBEY ,HEX INVERTERAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
HCF4069UBM1 ,HEX INVERTERHCF4069UBHEX INVERTER ■ MEDIUM-SPEED OPERATION t = 30ns (Typ.) at 10V PD■ STANDARDIZED SYMMETRICA ..
HCF4069UBM1 ,HEX INVERTERAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
HCF4069UM013TR ,HEX INVERTERABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +22 VDDV DC Input ..
HCF4069UM013TR ,HEX INVERTERapplications where thefabricated in Metal Oxide Semiconductormedium power TTL-drive and logic level ..
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HCF4069U
HEX INVERTER
1/7September 2001 MEDIUM-SPEED OPERATION
tPD = 30ns (Typ.) at 10V STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION

The HCF4069UB is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4069UB consists of six COS/MOS
inverter circuits. This device is intended for all
general purpose inverter applications where the
medium power TTL-drive and logic level
conversion capabilities of circuits such HCF4049B
HEX INVERTER/BUFFERS are not required.
HCF4069UB

HEX INVERTER
PIN CONNECTION
ORDER CODES
HCF4069UB
2/7
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
HCF4069UB
3/7
DC SPECIFICATIONS

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
HCF4069UB
4/7
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)


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