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HCF4010BM1STN/a1475avaiHEX BUFFER/CONVERTERS
HCF4010M013TR ST N/a42500avaiHEX BUFFER/CONVERTERS


HCF4010M013TR ,HEX BUFFER/CONVERTERSAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
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HCF4011BM1 ,QUAD 2 INPUT NAND GATESLOGIC DIAGRAM HL HHH L
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HCF4010BM1-HCF4010M013TR
HEX BUFFER/CONVERTERS
1/8July 2002 PROPAGATION DELAY TIME tPD = 40ns
(TYP.) at VDD = 10V CL = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT
CAPABILITY QUIESCENT CURRENT SPECIFIED UP TO
20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION

The HCF4010B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
It is an non inverting Hex Buffer/Converter and
can be used as CMOS to TTL or DTL logic level
converters as current "sink" ot "source" drivers or
as multiplexer (1 to 6).
It is a preferred replacement of HCF4050B in
buffer applications.
HCF4010B

HEX BUFFER/CONVERTER (NON INVERTING)
PIN CONNECTION
ORDER CODES
HCF4010B
2/8
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS

This device has High to Low level voltage conversion capability only
HCF4010B
3/8
DC SPECIFICATION

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
HCF4010B
4/8
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
(*) Typical temperature coefficent for all VDD value is 0.3 %/°C.
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
HCF4010B
5/8
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

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