H11F2M ,Photo FET OptocouplersApplicationsAs a remote variable resistor:Isolated variable attenuator Automatic gain controlActive ..
H11F3 ,PHOTO FET OPTOCOUPLERSFEATURESAs a remote variable resistor• ≤ 100Ω to ≥ 300 MΩ• ≥ 99.9% linearity• ≤ 15 pF shunt capacit ..
H11F3M ,6-Pin DIP Bilateral Analog FET Output OptocouplerApplicationsAs a remote variable resistor:Isolated variable attenuator Automatic gain controlActive ..
H11F3SD ,6-Pin DIP Bilateral Analog FET Output OptocouplerAPPLICATIONS As a variable resistor –• Isolated variable attenuator•Automatic gain control• Active ..
H11G1 ,6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)MAXIMUM RATINGS (T = 25°C unless otherwise noted)A1 6Rating Symbol Value UnitINPUT LEDReverse Volta ..
H11G13SD ,6-Pin DIP High Voltage Photodarlington Output OptocouplerHIGH VOLTAGEPHOTODARLINGTON OPTOCOUPLERSH11G1DESCRIPTIONH11G2The H11GX series are photodarlington-t ..
HCF4511B ,BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVERHCC/HCF4511BBCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER. HIGH-OUTPUT-SOURCING CAPABILITY (upto 25 mA) ..
HCF4511BEY ,BCD TO SEVEN SEGMENT LATCH DECODER DRIVESfeatures of CMOS with n-p-n bipolar outputtransistor capable of sourcing up to 25mA. Thiscapability ..
HCF4511BM1 ,BCD TO SEVEN SEGMENT LATCH DECODER DRIVESHCF4511BBCD TO SEVEN SEGMENT LATCH/DECODER/DRIVER ■ HIGH OUTPUT SOURCING CAPABILITY (up to 25mA).■ ..
HCF4511M013TR ,BCD TO SEVEN SEGMENT LATCH DECODER DRIVESABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +22 VDDV DC Input ..
HCF4515BF ,4-BIT LATCH/4-TO-16 LINE DECODERELECTRICAL CHARACTERISTICS (over recommended operating conditions)Test Conditions ValueSymbol Param ..
HCF4516 ,PRESETTABLE UP/DOWN COUNTERSHCF4516BPRESETTABLE BINARY UP/DOWN COUNTER ■ MEDIUM SPEED OPERATION :8 MHz (Typ.) at 10V■ SYNCHR ..
H11F2M
Photo FET Optocouplers
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers May 2012 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: The H11FXM series consists of a Gallium-Aluminum- ■ ≤ 100Ω to ≥ 300MΩ Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electri- ■ ≤ 15pF shunt capacitance cally isolated from the input and performs like an ideal ■ ≥ 100GΩ I/O isolation resistance isolated FET designed for distortion-free control of low As an analog switch: level AC and DC analog signals. The H11FXM series ■ Extremely low offset voltage devices are mounted in dual in-line packages. ■ 60 V signal capability pk-pk ■ No charge injection or latch-up ■ UL recognized (File #E90700) Applications As a remote variable resistor: ■ Isolated variable attenuator ■ Automatic gain control ■ Active filter fine tuning/band switching As an analog switch: ■ Isolated sample and hold circuit ■ Multiplexed, optically isolated A/D conversion Schematic Package Outlines OUTPUT 1 ANODE 6 TERM. CATHODE 2 5 OUTPUT 3 4 TERM. ©2007 H11F1M, H11F2M, H11F3M Rev. 1.0.5
