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H11D1N/a998avai6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)
H11D3ISOCOMN/a34avaiOptocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage


H11D1 ,6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)Rev. 1.3, 16-Apr-04 3H11D1/ H11D2/ H11D3/ H11D4VISHAYVishay SemiconductorsTypical Characteristics ( ..
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H11D3 ,Optocoupler, Phototransistor Output, With Base Connection, High BVCER VoltageRev. 1.3, 16-Apr-04 1H11D1/ H11D2/ H11D3/ H11D4VISHAYVishay SemiconductorsOutput Parameter Test con ..
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H11D1-H11D3
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
H11D1/ H11D2/ H11D3/ H11D4Document Number 83611
www.vishay.com
Optocoupler, Phototransistor Output, With Base Connection,
High BV CER Voltage
Features
CTR at IF = 10 mA, BV CER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage
- H11D1/H11D2, BV CER = 300 V
- H11D3/H11D4, BV CER = 200 V Isolation Test Voltage: 5300 V RMS Low Coupling Capacitance High Common Mode Transient Immunity Package with Base Connection
Agency Approvals
UL - File No. E52744 System Code H or J DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1 BSI IEC60950 IEC60965 FIMKO
Applications

Telecommunications
Replace Relays
Description

The H11D1/ H11D2/ H11D3/ H11D4 are optocou-
plers with very high BVCER. They are intended
telecommunications applications or any DC applica-
tion requiring a high blocking voltage.
Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
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