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GT8G121TOSN/a1700avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS


GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
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GT8G121
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G121

STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement−Mode Low Saturation Voltage
: VCE (sat) = 7 V (Max.) (@IC = 150 A) 4 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / µs.
Unit: mm
Weight: 0.36g
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