GT80J101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS High Input Impedance High Speed : t = 0.40µs (Max.) fLow Saturation Voltage : ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mmSTROBE ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: V = 8 V (Max.) (@I = 15 ..
GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
GT8G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash
GT8G132 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash
HC1-7R8-R , High Current Inductor
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC1-R87-R , High Current Inductor
HC240 , Package Information Datasheet for Mature Altera Devices
GT80J101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE
GT80J101 HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf = 0.40µs (Max.) Low Saturation Voltage : VCE (sat) = 3.5V (Max.) Enhancement−Mode
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) VCE (sat) (1)
Weight: 9.75g
Unit: mm
