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GT60M302TOSHIBAN/a8avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS


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GT60M302
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA
GT60M302
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M302
HIGH POWER SWITCHING APPLICATIONS
o The 3rd Generation
0 FRD Included Between Emitter and Collector
o Enhancement-Mode
0 High Speed
0 Low Saturation Voltage
MAXIMUM RATINGS (Ta = 25°C)
: tf= 0.22/1s (TYP.)
: trr=0.7ps (TYP.)
Unit in mm
20.5MAX. 3.3 i 0.2
26.0 $0.5
20.01- 0.6
5.4510.15 I§.4510.15
+ I to co m.
g l 2 3.4 oi In
==.f:lr)(=1 ma,
1. GATE
2. COLLECTOR(HEAT SINK)
3. EMITTER
JEITA -
TOSHIBA 2-21F2C
CARACTERISTICS SYMBOL RATINGS UNIT
Collector-Emi; Voltage VCES 900 V
Gate-Emitter Voltage VGES i 25 V
DC 1C 60
Collector Current A
lms ICP 120
Emitter-Collector DC IECF 15 A
Foward Current lms IECFP 120
Collector Power Dissipation
(Tc = 25°C) PC 200 W
J unction Temperature Tj 150 °C
Storage Temperature Range Tstg -55-150 T
Screw Torque - 0.8 Nun
EQUIVALENT CIRCUIT
Collector
Gate cr-'
Emitter
Weight : 9.75g
TOSHIBA GT60M302
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 25V, VCE = 0 - - i 500 nA
Collector Cut-off Current ICES VCE =900V, VGE = 0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) 10 = 60mA, VCE = 5V 3.0 - 6.0
Collector-Emitter Saturation
Voltage VCE (sat) (1) IC - 10A, VGE - 15V - 1.6 2.4
Collector-Emi) Saturation
Voltage VCE (sat) (2) IC - 60A, VGE - 15V - 2.2 3.3 V
. . VCE = 30V, VGE = 0
Input Capacitance Cies f= 1MHz - 4400 - pF
Rise Time tr - 0.25 0.60
. 510 C)
. . . Turn-on Time ton O_w,_l o - 0.35 0.80
Switching Time . 15V v-I gs
Fall Time tf O - 0.22 0.37
Turn-off Time toff - 15V 600V - 0.50 1.00
Emitter-Collector Forward Voltage VECF IECF = 15A, VGE = 0 - 1.5 2.0 V
. IECF = 15A, VGE = 0
Reverse Recovery Time trr di / dt= - 20A /,us - 0.7 2.5 ,us
Thermal Resistance Rth (i-e) IGBT - - 0.625 "C / W
Thermal Resistance Rth (i-e) Diode - - 4.0 T / W
2 2002-02-06
TOSHIBA
COLLECTOR~EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON
EMITTER
Te = 25°C
VGE=5V
0 1 2 3 4 5
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Te = 25''C
IC=10A
o 4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
10 - VGE
COMMON EMITTER
VCE = 5V
Te = 125°C
0 2 4 6 8 10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMI'I‘TER SATURATION
VOLTAGE VCE (sat) (V)
GT60M302
VCE - VGE
COMMON EMITTER
Te = - 40''C
IC=10A
4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Te = 1 25°C
IC=10A
4 8 12 16 20 24
GATE-EMITTER VOLTAGE VGE (V)
VCE (sat) - Te
COMMON EMITTER
VGE = 15V
IC=10A
0 40 80 120 160
CASE TEMPERATURE Te (°C)
TOSHIBA
GT60M302
VCE, VGE - QG
COMMON
EMITTER
RL = 2.50
Tc = 25°C
(X10V)
VCE = 150V
o 80 160 240 320 400 480
GATE CHARGE QG (nC)
COLLECTOR-EMITTER VOLTAGE VCE
GATEEMITTER VOLTAGE
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V, RC--5IQ
VGE = 1 15V, Tc=25°C
SWITCHING TIME (,us)
"o 10 20 30 40 50 60
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
MAX. (PULSED)
100 MAX.
CONTINUOU
30 PERATION)
.y.f SINGLE
PULSE Tc=25°C
CURVES MUST BE
3 DERATED
LINEARLY WITH
INCREASE IN
TEMPERATURE.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
CAPACITANCE C (pF) SWITCHING TIME (/13)
COLLECTOR CURRENT 10 (A)
SWITCHING TIME - RG
COMMON EMITTER
Vcc=600V
IC=60A
VGE=il5V
Tc=25°C
5 10 30 50 100 300 500
GATE RESISTANCE RG (Q)
C - VCE
300 COMMON
EMITTER
VGE=0V
100 f=1MHz
T =2 Q
50 c 50 Cres
1 3 5 10 30 50 100 300500 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
REVERSE BIAS SOA
Tj§125°C
VGE=i15V
100 RG=IOQ
10 30 100 300 1000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA GT60M302
Rth(t) - tw IECF - VECF
COMMON COLLECTOR
DIODE STAGE
(”C / W)
IGBT STAGE
Rth (t)
TRANSIENT THERMAL IMPEDANCE
EMITTER-COLLECTOR FORWARD CURRENT
IECF (A)
Tc=25°C
It)-' Io-' 10-3 10-2 IO-I 100 101 102 0 0.4 0.8 1.2 1.6 2.0 2.4
EMITTER-COLLECTOR FORWARD VOLTAGE
PULSE WIDTH tw (s) VECF
Irr, trr - IECF Irr, trr - di/ dt
2.0 - 20 2.0 - 100
li. _ COMMON COLLECTOR It - COMMON COLLECTOR
v dildt= -20A/ps v IECF=60A
1.6- 16 Tc=25oc 1.6- 80 Tc=25°C
1.2- 12 1.2-
Irr (A)
0.4 - 0.4 - 20
PEAK REVERSE RECOVERY CURRENT
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY TIME t"
REVERSE RECOVERY TIME t"
0 - 0 0 - 0
0 20 40 60 80 100 0 40 80 120 160 240
EMITTER-C0LLECT0R FORWARD CURRENT .
IECF (A) di/dt (A/ps)
5 2002-02-06
TOSHIBA GT60M302
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2002-02-06
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