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GT60J321TOSHIBAN/a20avaiInsulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications


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GT60J321
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321

The 4th Generation
Soft Switching Applications Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta �
�� � 25°C)
Equivalent Circuit

Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
ic,good price


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