GT5G134 ,IGBT for strobe flashAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25, unless otherwise specified) , unless ot ..
GT5J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 5A) f ..
GT60J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode High speed: t = 0.30 µs (typ.) (I = 60 A) f C Low saturat ..
GT60J322 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode Low saturation voltage: V = 1.25 V (typ.) (I = 60 A) CE (sa ..
GT60J323 ,IGBT for soft switching applicationsGT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Reso ..
GT60M301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT60M301f'l'lTAnM'lltn'tHIGH POWER SWITCHING
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
HC1-5502B-9 ,EIA/ITU PABX SLIC with 30mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT• Capable of 12V or 5V (V +) OperationBfun ..
HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
HC1-5504B-9 ,EIA/ITU PABX SLIC with 40mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT functions• Pin for Pin Replacement for th ..
HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT5G134
IGBT for strobe flash
GT5G134
Discrete IGBTs Silicon N-Channel IGBT
GT5G134GT5G134GT5G134GT5G134
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Dedicated to Photo-Flash Intensity Control Applications Dedicated to High-Speed-Switching Photo Flash Applications
Note: The product(s) described herein should not be used for any other application.
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Enhancement mode
(2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A)
(3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A)
(4) Peak collector current: ICP = 110 A (max)
(5) Built-in zener diode between gate and emitter
(6) SOP-8 package
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
