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GT40Q322
Voltage Resonance Inverter Switching Application
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
GT40Q322 Voltage Resonance Inverter Switching Application Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics
Equivalent Circuit Gate
Emitter
