| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GT30F126 |
TOSHIBA|TOSHIBA |
N/a |
2000 |
 |
|
GT30J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications The 4th generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT30J122 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
GT30J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mmHIGH ..
GT30J311 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSAPPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : t = 0 ..
HC005A0F1-SZ , 18-36Vdc & 36-75Vdc Input; 1.0V-5Vdc Output; 4A - 6A Output Current
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
HC109 , Dual J-K Flip-Flop with Set and Reset
