| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GT25Q101 (IGBT) |
TOS|TOSHIBA |
N/a |
100 |
 |
|
GT25Q102 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching ApplicationsApplications Unit: mm The 3rd Generation Enhancement-Mode High Speed: t = 0.32 µs (max) ..
GT25Q301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The 3rd generation Enhancement-mode High speed: t = 0.32 µs (max) f Low ..
GT28F008B3T-110 , SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F016B3TA90 , SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F160B3T120 , SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
HBN2444S6R , Low Vcesat NPN Epitaxial Planar Transistor (Dual Transistors)
HBR1105W , Single Color 3216 Dome Lenz Type
HBS100ZG-A ,One - HBS SERIES - 100 WATT
