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GT25G101TOSHIBAN/a100avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS


GT25G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mmSTR ..
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GT25G101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101

STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat)=8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive
MAXIMUM RATINGS (Ta=25°C)

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Rth (j−c)
Weight : 1.5g
Unit in mm
ic,good price


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