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GT23L16M2Y-S GENITOP N/a 2500



GT25G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mmSTR ..
GT25G102 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) ..
GT25J101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.35,us (Max.)0 Low Satu ..
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS20.5MAX. 3.3 $0.2 I0 High Input Impedance26.0 i 0.50 High Speed : tf= 0.5 ps (Max.)0 Lo ..
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