| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GT20L24S1W |
GENITOP |
N/a |
980 |
 |
|
GT220PS , Mini size of Discrete semiconductor elements
GT25G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mmSTR ..
GT25G102 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) ..
GT25J101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.35,us (Max.)0 Low Satu ..
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
HBFP0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorApplicationsThis product is based on a 25 GHz• LNA, Oscillator, DriverEmitter Collectortransition f ..
HBFP-0420-TR2 ,High Performance Isolated Collector Silicon Bipolar TransistorApplications high performance isolatedOutline 4Tcollector silicon bipolar junction• Transition Freq ..
HBG1105W , Single Color 3216 Dome Lenz Type
