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GT20G101TOSN/a3avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
GT20G101TOSHIBAN/a10000avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS


GT20G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONSGT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mmSTROB ..
GT20G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 130A) CE (sat) ..
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GT20G101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT20G101

STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Rth (j−c)
Weight: 1.5g
Unit: mm
ic,good price


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