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GT20D101TOSN/a20avaiINSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS


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GT20D101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA
GT20D101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
HIGH POWER AMPLIFIER APPLICATION
GT20D101i
Unit in mm
20.5MAX. gi33 t0.2
0 High Breakdown Voltage : VCEs=250V(Min.)
It High Forward Transfer Admittance .' IYfe|= 10S(Typ.) 'Wéi m g
0 Complementary to GT20D201 D i T, C? ll
o Enhancement-Mode NI i I I F
2.5 ' l g
MAXIMUM RATINGS (Ta =25°C) 10:335 ' 'R
CARACTERISTICS SYMBOL RATINGS UNIT 5.45 i 0.15 5.45 , 0.15
Collector-Emi; Voltage VCES 250 V Fi'-', w E
Gate-Emitter Voltage VGES i20 V g, E g . h
Collector Current IC 20 A 1 2 3 -
1. GATE
Latch Up Current IL 60 A 2. COLLECTOR(HEAT SINK)
Collector Power Dissipation P 180 W 3. EMITTER
(Tc=25°C) C JEDEC -
Junction Temperature Tj 150 T JEITA -
Storage Temperature Range Tstg -55--150 T TOSHIBA 2-21F1C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Weight .' 9.75g
CARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICES VCE = 250V, VGE = 0 - - 50 PA
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i 10 PA
Collector-Emi)
Saturation Voltage VCE (sat) IC - 15A, VGE - 10V - 1.5 3.0
Gate-Emitter Cut-off Voltage VGE (OFF) VCE = 10V, IC = 100mA 1.4 - 3.2
Y V = 10V, I = IA - 3 -
Forward Transfer Admittance I fel CE C
IYfel VCE = 10V, 10 = 10A - 10 -
. . VCE=10V, IE=0
Input Capacitance Cies f-- lMHz - 1400 - pF
. VCE=10V, IE=0
Output Capacitance Coes f-- lMHz - 400 - pF
. VCE=10V, IE=0
Reverse Transfer Capacitance Cres f: 1MHz - 65 - pF
TOSHIBA
COLLECTOR CURRENT 10 (A)
FORWARD TRANSFER ADMITTANCE
”M (S)
CAPACITANCE C (pF)
IC - VCE
COMMON EMITTER
Tc = 25°C
0 4 8 12 16 20 24
COLLECTOR-EMITTER VOLTAGE VCE (V)
lYfel - IC
COMMON EMITTER
VCE = 10v
3 Te = - 40''C
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
C - VCE
COMMON
EMITTER
VGE = O
f-- IMHZ
500 Tc = 25''C
1 3 10 30 100 300
c0LLEcT0RaMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
COLLECTOR POWER DISSIPATION
COLLECTOR CURRENT 10 (A)
VOLTAGE VCE(sat) (V)
PC (W)
GT20D101
IC - VGE
COMMON EMITTER
VCE = 10V
Te = 125°C
2 4 6 8 10 12
GATE-EMITTER VOLTAGE VGE (V)
VCE(sat) - Te
COMMON EMITTER
VGE = 10V
0 50 100 150 200
CASE TEMPERATURE Te (°C)
PC -Te
0 50 100 150 200 250
CASE TEMPERATURE Tc (°C)
TOSHIBA
GT20D101
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
IL MAX.
50 MAX. (PULSED) X
MAX. (CONTINUO US)
10 100ms X
DC OPERATION
5 Te = 25°C
0.5 X SINGLE NONREPETITIVE
0.3 PULSE Ta=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA GT20D101
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2002-02-06
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