Partno |
Mfg |
Dc |
Qty |
Available | Descript |
GT16PT8515 |
GT |
N/a |
65 |
|
|
GT16PT8515 |
GOTOP |
N/a |
19 |
|
|
GT20D101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSGT20D101HIGH POWER AMPLIFIER APPLICATION Unit in mmHigh Breakdown Voltage : VCEs=25OV(Min.)High For ..
GT20G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONSGT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mmSTROB ..
GT20G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 130A) CE (sat) ..
GT20J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT20J311 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
HBF4522D ,Sincerity Mocroelectronics - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420 ,High Performance Isolated Collector Silicon Bipolar TransistorFeatures Surface Mount Plastic Description• Ideal for High Gain, Low Hewlett Packard’s HBFP-0420 is ..