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GT15Q102
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
GT15Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q102 High Power Switching Applications The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta ��� � 25°C)
Unit: mm
Weight: 4.6 g
