GT10J312 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT10J321 ,TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTApplications● The 4th generation● Enhancement-mode● Fast Switching(FS) :Operating frequency up to 1 ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mmHIGH ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 15A) f ..
GT15J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications The 4th generation FS (fast switching) Enhancement-mode High speed: t = ..
GT15J321. ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsGT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Sw ..
HBF4522D ,Sincerity Mocroelectronics - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420 ,High Performance Isolated Collector Silicon Bipolar TransistorFeatures Surface Mount Plastic Description• Ideal for High Gain, Low Hewlett Packard’s HBFP-0420 is ..
HBFP-0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorHigh Performance IsolatedCollector Silicon BipolarTransistorTechnical DataHBFP-0420
HBFP0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorApplicationsThis product is based on a 25 GHz• LNA, Oscillator, DriverEmitter Collectortransition f ..
HBFP-0420-TR2 ,High Performance Isolated Collector Silicon Bipolar TransistorApplications high performance isolatedOutline 4Tcollector silicon bipolar junction• Transition Freq ..
GT10J312
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
GT10J312,GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J312,GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) FRD included between Emitter and Collector.
MAXIMUM RATINGS (Ta = 25°C) Tstg
EQUIVALENT CIRCUIT Weight: 1.5g
Weight: 1.4g
Unit: mm
