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GT10G131TOSN/a9000avaiIGBT for strobe flash


GT10G131 ,IGBT for strobe flashThermal Characteristics Characteristics Symbol Rating Unit Thermal resistance , junction to R (1 ..
GT10J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : t = 0.30µs (Max.) fLow S ..
GT10J311 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT10J312 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT10J321 ,TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTApplications● The 4th generation● Enhancement-mode● Fast Switching(FS) :Operating frequency up to 1 ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mmHIGH ..
HBF4522D ,Sincerity Mocroelectronics - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420 ,High Performance Isolated Collector Silicon Bipolar TransistorFeatures Surface Mount Plastic Description• Ideal for High Gain, Low Hewlett Packard’s HBFP-0420 is ..
HBFP-0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorHigh Performance IsolatedCollector Silicon BipolarTransistorTechnical DataHBFP-0420
HBFP0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorApplicationsThis product is based on a 25 GHz• LNA, Oscillator, DriverEmitter Collectortransition f ..
HBFP-0420-TR2 ,High Performance Isolated Collector Silicon Bipolar TransistorApplications high performance isolatedOutline 4Tcollector silicon bipolar junction• Transition Freq ..


GT10G131
IGBT for strobe flash
GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131

Strobe Flash Applications 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Thermal Characteristics Marking
Weight: 0.08 g (typ.)
Circuit Configuration

Lot No.
Note 3
Part No. (or abbreviation code) 2 3 47 8 6
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