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Partno	Mfg	Dc	Qty	Available	Descript
GT023453	NS|National Semiconductor	N/a	52

GT10G131 ,IGBT for strobe flashThermal Characteristics Characteristics Symbol Rating Unit Thermal resistance , junction to R (1 ..
GT10J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS
The 3rd Generation.
Enhancement−Mode.
High Speed. : t = 0.30µs (Max.) f
Low S ..
GT10J311 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS
The 3rd Generation
Enhancement−Mode
High Speed : t = 0.30µs (Max.) f
Low Satu ..
GT10J312 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS
The 3rd Generation
Enhancement−Mode
High Speed : t = 0.30µs (Max.) f
Low Satu ..
GT10J321 ,TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTApplications●　The 4th generation●　Enhancement-mode●　Fast Switching(FS) :Operating frequency up to 1 ..
HBF4522D ,Sincerity Mocroelectronics - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420 ,High Performance Isolated Collector Silicon Bipolar TransistorFeatures Surface Mount Plastic Description• Ideal for High Gain, Low Hewlett Packard’s HBFP-0420 is ..