Partno |
Mfg |
Dc |
Qty |
Available | Descript |
GT-8909 |
GRANDTECH |
N/a |
85 |
|
|
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mmSTROBE ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: V = 8 V (Max.) (@I = 15 ..
GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
GT8G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash
GT8G132 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash
HC1-7R8-R , High Current Inductor
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR