| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GT-64120-B-O |
|
N/a |
68 |
 |
|
GT80J101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: m ..
GT80J101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS High Input Impedance High Speed : t = 0.40µs (Max.) fLow Saturation Voltage : ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mmSTROBE ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: V = 8 V (Max.) (@I = 15 ..
GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
HC157 ,HC158 QUAD 2 CHANNEL MULTIPLEXER INV. HC157 QUAD 2 CHANNEL MULTIPLEXERLOGIC DIAGRAM2/974VHC157
HC158 ,HC158 QUAD 2 CHANNEL MULTIPLEXER INV. HC157 QUAD 2 CHANNEL MULTIPLEXERLOGIC DIAGRAM2/974VHC157
HC163 , Presettable Counters
