| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GT-48331-P-0 |
GALILEO |
N/a |
900 |
 |
|
GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
GT50J325 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
HC125 ,Quad Buffer with 3-STATE OutputsMAXIMUM RATINGS*Symbol Parameter Value UnitThis device contains protectionÎÎÎcircuitry to guard aga ..
HC1-2R3-R , High Current Inductor
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
