Partno |
Mfg |
Dc |
Qty |
Available | Descript |
GT-48302A-B-0 |
M |
N/a |
144 |
|
|
GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
GT50J325 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset