| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GEMS2305987-3 |
GEMS |
N/a |
989 |
 |
|
GF10G , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10K , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10M , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10NB60SD , N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT
GF1A ,Surface Mount Glass Passivated Rectifier, Forward Current 1.0A®GF1A thru GF1MVishay Semiconductorsformerly General SemiconductorSurface Mount Glass Passivated Re ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: V = 8 V (Max.) (@I = 15 ..
GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
GT8G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash
