| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| GECI3216GR33KT |
|
N/a |
39000 |
 |
|
GF10G , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10K , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10M , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10NB60SD , N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT
GF1A ,Surface Mount Glass Passivated Rectifier, Forward Current 1.0A®GF1A thru GF1MVishay Semiconductorsformerly General SemiconductorSurface Mount Glass Passivated Re ..
GT60M303 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSGT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mmHIGH ..
GT60N321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th GenerationApplications Unit: mmThe 4th Generation FRD included between emitter and collector Enhanc ..
GT80J101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: m ..
