Partno |
Mfg |
Dc |
Qty |
Available | Descript |
GDM220002370 |
KYOCERA |
N/a |
2550 |
|
|
GDS1110AB , Intel-R StrongARM SA-1110 Microprocessor
GDS1110BB , Intel-R StrongARM SA-1110 Microprocessor
GE28F128L18B85 , StrataFlash Wireless Memory
GE28F128L30B85 , 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30)
GE28F128W18BD60 , Intel® Wireless Flash Memory
GT40Q323 , Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
GT40T101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mmH ..
GT40T301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching ApplicationsApplications Unit: mm FRD included between emitter and collector Enhancement-mode High ..