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GA600GD25SIRN/a5avai250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package


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GA600GD25S
250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package
International
TOR Rectifier
SINGLE SWITCH IGBT DUAL INT-A-PAK
Features
q Standard speed, optimized for battery powered
application
. Very low conduction losses
q HEXFREDTM antiparallel diodes with ultra-soft
recovery
. Industry standard package
. UL recognition pending
. Internal thermistor
Benefits
. Increased operating efficiency
. Direct mounting to heatsink
. Performance optimized for power conversion: UPS,
SMPS, Welding
. Lower EMI, requires less snubbing
Absolute Maximum Ratings
PD - 50071 C
GA600GD25S
StandardTM Speed IGBT
VCES = 250V
@VGE =15V, IC = 600A
Parameter Max. Units
VCES Collector-to-Emitter Voltage 250 V
lc @ To = 25°C Continuous Collector Current 600
ICM Pulsed Collector Current0) 1200 A
ILM Peak Switching Current© 1200
IFM Peak Diode Forward Current 1200
VGE Gate-to-Emitter Voltage _+17 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ To = 25°C Maximum Power Dissipation 1920 W
PD @ To = 85°C Maximum Power Dissipation 1000
To Operating Junction Temperature Range -40 to +150 ''C
Tsms Storage Temperature Range MO to +125
Thermal / Mechanical Characteristics
Parameter Typ. Max. Units
ReJc Thermal Resistance, Junction-to-Case - IGBT - 0.065
Roos Thermal Resistance, Junction-to-Case - Diode - 0.20 'C/W
Recs Thermal Resistance, Case-to-Sink - Module 0.04 -
Mounting Torque, Case-to-Heatsink © - 6.0 N.m
Mounting Torque, Case-to-Terminal 1, 2 © - 5.0
Mounting Torque, Case-to-Terminal 3,4,5,6 - 1.5
Weight of Module 365 - g
1
08/27/02
International
GA600GD25S TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)cEs Collector-to-Emitter Breakdown Voltage 250 - - Vas = OV, 10 = 1mA
V0.30,” Collector-to-Emitter Voltage - 1.25 1.4 Vas = 15V, Ic = 600A
- 1.25 - V Vss = 15V, Ic = 600A, Tu = 125°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 k; = 5.0mA, VCE = 6.0V
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = 6.0V, IC = 5.0mA,TC= 25/125°C
gfe Forward Transconductance © - 720 - S VCE = 25V, IC = 600A
ICES Collector-to-Emitter Leaking Current - - 2.0 mA VGE = 0V, VCE = 250V
- - 20 Vas = 0V, VCE = 250V, TJ = 125°C
VFM Diode Forward Voltage - Maximum - 1.5 1.8 V IF = 300A, VGE = 0V
- 1.5 - IF: 300A, VGE = OV, To = 125°C
IGES Gate-to-Emitter Leakage Current - - 1.0 pA l/ss = t14)/ (18V zeners gate-emitter)
ATDp Pulse Diode Temp Rise - - 80 ''C IC = 300A, t = 150msec, Tc =70°C
R-T25 Thermistor, Positive Temp Coefficient 738 820 902 Q I = 100mA,P = 2.5mW/°C (see note 1)
Dynamic Characteristics - T, = 125°C (unless
otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 3825 5738 Vcc = 200V, Vas = 15V
Qge Gate - Emitter Charge (turn-on) - 555 832 nC Ic = 600A
Qgc Gate - Collector Charge (turn-on) - 1262 1893 Tu = 25°C
tdwn) Turn-On Delay Time - 1060 - RSI = 159, R62 = on,
t, Rise Time - 950 - ns IC = 600A
tum) Turn-Off Delay Time - 846 - Vcc = 150V, Inductor load
tr Fall Time - 934 - Vas = t15V
Eon Turn-On Switching Energy - 17 - mJ See Fig. 17, 19
Es, (1) Turn-Off Switching Energy - 105 -
Ets (1) Total Switching Energy - 122 250
Cies Input Capacitance - 86063 - VGE = 0V
Coes Output Capacitance - 9754 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 1913 - f = 1 MHz
trr Diode Reverse Recovery Time - 314 - ns Ic = 600A
|rr Diode Peak ReverseCurrent - 80 - A RG1 = 159
Qrr Diode Recovery Charge - 12513 - pC RG2 = on
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 632 - A/ps Vcc = 150V
During tr, di/dt = 500A/ps
Notes:
1. The thermistor has an average rate of change of m /°C between 20°C and 125°C.
Consult U.S. Sensor data sheet for P821GS1K for details

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