FSB6726 ,PNP General Purpose AmplifierFSB6726 FSB6726C EB TM SuperSOT -3 PNP Gener ..
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FSB749 ,PNP Low Saturation Transistorapplications involving pulsed or low duty cycle ope 1) These ratings are based on a maximum j ..
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FSB6726
PNP General Purpose Amplifier
FSB6726 FSB6726 C E B TM SuperSOT -3 PNP General Purpose Amplifier ium power amplifiting collector currents to 1.0 A. from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FSB660/FSB660A Symbol Parameter Units Collector-Emitter VoltageV VCEO V VCBO Emitter-Base Voltage5V V - Continuous1.5A IC -55 to +150 TTJ, stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units FSB6726 Total Device DissipationmW PD Thermal Resistance, Junction to Ambient°C/W RqJA ã 1999 1 of 2 fsb6726lwp Pr77 RevA Page 250 500 °COperating and Storage Junction Temperature Range Collector Current EBO 40Collector-Base Voltage 30 Sourced ches requirers and swineral purpose medis device is designed for geTh
