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FSB660
PNP Low Saturation Transistor
FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 (SOT-23) PNP Low Saturation Transistor with high current gain and low saturation voltage with collector currents up to 2A tinuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FSB660/FSB660A Symbol Parameter Units Collector-Emitter VoltageV VCEO 06V VCBO Emitter-Base Voltage5V V - Continuous2A IC -55 to +150 TTJ, stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Symbol Characteristic Units FSB660/FSB660A Total Device DissipationmW PD Thermal Resistance, Junction to Ambient°C/W RqJA ã 2001 FSB660/FSB660A Rev. B1 250 500 °COperating and Storage Junction Temperature Range Collector Current EBO Collector-Base Voltage 60 con These devices are designed
