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FSB50250FAIRCHILN/a46avaiSmart Power Module (SPM)


FSB50250 ,Smart Power Module (SPM)applicationsand 3 half-bridge HVICs for FRFET gate driving. FSB50250provides low electromagnetic in ..
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FSB50250
Smart Power Module (SPM)
FSB50250 Smart Power Module (SPM) May 2005 TM SPM FSB50250 Smart Power Module (SPM) Features General Description TM FSB50250 is a tiny smart power module (SPM ) based on • 500V 2.0A 3-phase FRFET inverter including high voltage FRFET technology as a compact inverter solution for small integrated circuit (HVIC) power motor drive applications such as fan motors and water • 3 divided negative dc-link terminals for inverter current sens- suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), ing applications and 3 half-bridge HVICs for FRFET gate driving. FSB50250 provides low electromagnetic interference (EMI) characteristics • HVIC for gate driving and undervoltage protection with optimized switching speed. Moreover, since it employs • 3/5V CMOS/TTL compatible, active-high interface FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based • Optimized for low electromagnetic interference power module or one-chip solution. The package is optimized • Isolation voltage rating of 1500Vrms for 1min. for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned. FSB50250 is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units DC Link Input Voltage, V 500 V PN Drain-source Voltage of each FRFET I Each FRFET Drain Current, Continuous T = 25°C 1.0 A D25 C I Each FRFET Drain Current, Continuous T = 80°C 0.7 A D80 C I Each FRFET Drain Current, Peak T = 25°C, PW < 100µs 2.0 A DP C P Maximum Power Dissipation T = 80°C, For Each FRFET 4.5 W D C V Control Supply Voltage Applied between V and COM 20 V CC CC V High-side Bias Voltage Applied between V and V 20 V BS B S V Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V IN T Operating Junction Temperature -20 ~ 125 °C J T Storage Temperature -50 ~ 150 °C STG Each FRFET under inverter operat- Junction to Case Thermal Resistance °C/W R 9.3 θJC ing condition (Note 1) 60Hz, Sinusoidal, 1 minute, Con- V Isolation Voltage 1500 V ISO rms nection pins to heatsink ©2005 1 FSB50250 Rev. B
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