FQU7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FQU7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
FQU7P06 ,60V P-Channel MOSFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P06TU ,60V P-Channel QFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P20 ,200V P-Channel MOSFET
FQU9N25TU ,250V N-Channel QFET
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
GA150KS61U ,600V UltraFast 10-30 kHz Ls Chop S IGBT in a INT-A-Pak packageFeatures3 Generation 4 IGBT technologyV = 600VCES UltraFast: Optimized for high operating1 freq ..
FQU7N10L
100V LOGIC N-Channel MOSFET
FQD7N10L / FQU7N10L December 2000 TM QFET QFET QFET QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, R = 0.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirments allowing well suited for low voltage applications such as high direct operation from logic drives efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD7N10L / FQU7N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 5.8 A D C - Continuous (T = 100°C) 3.67 A C I (Note 1) Drain Current - Pulsed 23.2 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 5.8 A AR E (Note 1) Repetitive Avalanche Energy 2.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 25 W C - Derate above 25°C 0.2 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 5.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
