IC Phoenix
 
Home ›  FF21 > FQD2N60C-FQU2N60C,600V N-Channel MOSFET
FQD2N60C-FQU2N60C Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FQD2N60CFAIN/a166avai600V N-Channel MOSFET
FQD2N60CFSCN/a2500avai600V N-Channel MOSFET
FQU2N60CFAIN/a74avai600V N-Channel MOSFET
FQU2N60CFAIRCHILN/a16000avai600V N-Channel MOSFET
FQU2N60CFAIRCHILDN/a350avai600V N-Channel MOSFET
FQU2N60CFSCN/a24avai600V N-Channel MOSFET


FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  1.9A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FQU2N90 ,900V N-Channel MOSFET
FQU2N90TU ,900V N-Channel QFET
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..


FQD2N60C-FQU2N60C
600V N-Channel MOSFET
FQD2N60C / FQU2N60C TM QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  1.9A, 600V, R = 4.7Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 8.5 nC) planar stripe, DMOS technology.  Low Crss ( typical 4.3 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!! !!!! D-PAK I-PAK ● ● ● ● ● ● ● ● GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD2N60C / FQU2N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 1.9 A D C - Continuous (T = 100°C) 1.14 A C I (Note 1) Drain Current - Pulsed 7.6 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 120 mJ AS I Avalanche Current (Note 1) 1.9 A AR E Repetitive Avalanche Energy (Note 1) 4.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P Power Dissipation (T = 25°C) 44 W D C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.87 °C/W θJC R Thermal Resistance, Junction-to-Ambient* -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED