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FQU13N06 from FAIRCHILD, Fairchild Semiconductor 88pcs , TO251,60V N-Channel MOSFET
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applications such as DC/DCconverters, high efficiency switching for powermanagement in portable and battery operated products.DD ! !""!!""""G! !"" D-PAK I-PAKG SGFQD Series FQU SeriesD S ! !SAbsolute Maximum Ratings T = 25°C unless otherwise notedCSymbol Parameter FQD13N06 / FQU13N06 UnitsV Drain-Source Voltage 60 VDSSI - Continuous (T = 25°C)Drain Current 10 AD C- Continuous (T = 100°C)6.3 ACI (Note 1)Drain Current - Pulsed 40 ADMVGate-Source Voltage ± 25 VGSSE (Note 2)Single Pulsed Avalanche Energy 85 mJASIAvalanche Current (Note 1) 10 AARE (Note 1)Repetitive Avalanche Energy 2.8 mJARdv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/nsPower Dissipation (T = 25°C) *2.5 WP ADPower Dissipation (T = 25°C)28 WC- Derate above 25°C 0.22 W/°CT , TOperating and Storage Temperature Range -55 to +150 °CJ STGMaximum lead temperature for soldering purposes,T 300 °CL1/8" from case for 5 secondsThermal Characteristics Symbol Parameter Typ Max UnitsRThermal Resistance, Junction-to-Case -- 4.5 °C/WθJCRThermal Resistance, Junction-to-Ambient * -- 50 °C/WθJARThermal Resistance, Junction-to-Ambient -- 110 °C/WθJA* When mounted on the minimum pad size recommended (PCB Mount)2001 Fairchild Semiconductor Corporation Rev. A1. May 2001FQD13N06 / FQU13N06

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