FQPF8N60CF ,N-Channel QFET?FRFET?MOSFET 600V, 6.26A, 1.5?FeaturesDescriptionThis N-Channel enhancement mode power MOSFET is • 7.5 A, 600 V, R = 1.2 Ω(Max.) ..
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FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FQPF9N50 ,500V N-Channel MOSFET
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FQPF8N60CF
N-Channel QFET?FRFET?MOSFET 600V, 6.26A, 1.5?
FQPF8N60CF N-Channel MOSFET March 2013 FQPF8N60CF ® ® N-Channel QFET FRFET MOSFET 600 V, 6.26 A, 1.5 Ω Features Description This N-Channel enhancement mode power MOSFET is • 7.5 A, 600 V, R = 1.2 Ω(Max.) @V = 10 V, I = 3.75 A DS(on) GS D ® produced using Fairchild Semiconductor ’s proprietary planar • Low Gate Charge (Typ. 28 nC) stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state • Low C (Typ. 12 pF) rss resistance, and to provide superior switching performance and • 100% Avalanche Tested high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G TO-220F GS D S Absolute Maximum Ratings Symbol Parameter FQPF8N60CFT Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25°C) 6.26* A D C - Continuous (T = 100°C) 3.96* A C (Note 1) I Drain Current - Pulsed 25* A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 160 mJ AS (Note 1) I Avalanche Current 6.26 A AR (Note 1) E Repetitive Avalanche Energy 14.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 48 W D C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF8N60CF Unit R Thermal Resistance, Junction-to-Case 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient 62.5 °C/W θJA ©200 1 FQPF10CF Rev. C0
