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FQPF4P40
400V P-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.4A, -400V, R = 3.1Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. S !!!!!!!! ●●●● ●●●● G!!!!!!!! ●●●●●●●● ▶▶▶▶ ▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●● ●●●● G D S TO-220F !!!! !!!! FQPF Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF4P40 Units V Drain-Source Voltage -400 V DSS I - Continuous (T = 25°C) Drain Current -2.4 A D C - Continuous (T = 100°C) -1.52 A C I (Note 1) Drain Current - Pulsed -9.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 260 mJ AS I Avalanche Current (Note 1) -2.4 A AR E (Note 1) Repetitive Avalanche Energy 3.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns P Power Dissipation (T = 25°C) 39 W D C - Derate above 25°C 0.31 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQPF4P40
