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FQPF4P25
250V P-Channel MOSFET
FQPF4P25 December 2000 TM QFET QFET QFET QFET FQPF4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -250V, R = 2.1Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. S !!!!!!!! ●●●●●●●● ●●●● G!!!!!!!! ●●●● ▶▶▶▶▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●●●●●● G D !!!! S TO-220F !!!! D FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF4P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -2.8 A D C - Continuous (T = 100°C) -1.77 A C I (Note 1) Drain Current - Pulsed -11.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 280 mJ AS I Avalanche Current (Note 1) -2.8 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 38 W D C - Derate above 25°C 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.29 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A2, December 2000
