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FQPF4N9005N/a50avai900V N-Channel MOSFET
FQPF4N90FAIRCHILDN/a500avai900V N-Channel MOSFET


FQPF4N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 900V, R = 3.3 Ω @ V = 10 VDS(on ..
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FQPF4N90
900V N-Channel MOSFET
FQPF4N90 October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, R = 3.3 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D ! ! "" "" !! "" ! ! G "" TO-220F G D ! ! S IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF4N90 Units V Drain-Source Voltage 900 V DSS I - Continuous (T = 25°C) Drain Current 2.5 A D C - Continuous (T = 100°C) 1.58 A C I Drain Current - Pulsed (Note 1) 10 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 570 mJ AS I Avalanche Current (Note 1) 2.5 A AR E Repetitive Avalanche Energy (Note 1) 4.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 47 W D C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.66 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. B, October 2001
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