FQP3N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 4.8Ω @V = 10 VDS(on) ..
FQP3N80C ,800V N-Channel Advance Q-FET C-SeriesFQP3N80C/FQPF3N80CTMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFET
FQP3N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 4.8Ω @V = 10 VDS(on) ..
FQP3N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 4.8Ω @V = 10 VDS(on) ..
FQP3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQP3N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQP3N90900V N-Channel MOSFET
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FQP3N80C-FQPF3N80C
800V N-Channel Advance Q-FET C-Series
FQP3N80C/FQPF3N80C TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, R = 4.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP3N80C FQPF3N80C Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 33 * A D C - Continuous (T = 100°C) 1.9 1.9 * A C I (Note 1) Drain Current - Pulsed 12 12 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 320 mJ AS I Avalanche Current (Note 1) 3A AR E (Note 1) Repetitive Avalanche Energy 10.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 107 39 W D C - Derate above 25°C 0.85 0.31 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP3N80C FQPF3N80C Units R Thermal Resistance, Junction-to-Case 1.17 3.2 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. A, April 2003
